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/Title (MHL21336 2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier - Archived)
/Subject (Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.)
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2005-07-07T22:40:26Z
2005-07-07T15:41:53-07:00
Acrobat Distiller 5.0 (Windows)
Freescale Semiconductor
BroadVision, Inc.
MHL21336 2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.
linear, cdma, base station, 3g, ldmos
2005-07-07T22:40:26Z
2005-07-07T15:41:53-07:00
Freescale Semiconductor
2005-07-07T15:41:53-07:00
MHL21336 2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.
Freescale Semiconductor
MHL21336 2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.
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